文章介绍了我们利用脉冲激光沉积(PLD)方法原位生长MgB2超导薄膜的工作.实验采用两步法的方案:高真空条件下在Al2O3(001)衬底上沉积Mg-B混合物加覆盖Mg层的双层结构,然后将该前驱体在630℃左右的Ar气氛中原位退火,成功制备出了有较好重复性的MgB2超导薄膜,其最高的起始转变温度为36.5K,转变宽度在1K左右.我们认为该方法为进一步研究基于MgB2的多层结构器件提供了一种可行的发展思路.
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