利用磁控溅射方法,在(100),(110)和(111)LaAlO3(LAO)衬底上制备得到了不同生长方向的La0.7Sr0.3MnO3(LSMO)薄膜并对其结构及磁电学性能进行了系统研究.结果表明:LSMO薄膜完全按LAO衬底取向生长;(111)生长方向的薄膜由于晶格畸变程度最小,磁畴方向能较好的保持一致性,从而具有最大的磁饱和强度值;高的磁有序度减弱了巡游电子eg的自旋无序相关散射,有效降低了电阻.但外加磁场后电阻变化不明显,最大磁电阻值只有5.1%.
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