掺杂对二硼化镁超导体上临界磁场的影响

低温物理学报 , 2008, 30(1): 70-73. doi: 10.3969/j.issn.1000-3258.2008.01.015

掺杂对二硼化镁超导体上临界磁场的影响

苏希玉 ^1, , 侯艳丽 ^2, , 侯芹英 ^3, , 张霞 ^4,

1.曲阜师范大学物理工程学院,山东曲阜,273165

2.曲阜师范大学物理工程学院,山东曲阜,273165

3.曲阜师范大学物理工程学院,山东曲阜,273165

4.曲阜师范大学物理工程学院,山东曲阜,273165

关键词： GL理论 , 有效质量各向异性 , 掺杂 , 上临界磁场

INFLUENCE OF DOPING ON THE UPPER CRITICAL FIELD OF MGB2 SUPERCONDUCTORS

采用二带Ginzburg-Landau(GL)理论模型,考虑到能带有效质量的各向异性,讨论了MgB2超导体的上临界磁场对角度、温度和相干长度的依赖关系.结果表明,替代杂质越多,上临界磁场越强,这与实验结果符合.

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掺杂对二硼化镁超导体上临界磁场的影响

INFLUENCE OF DOPING ON THE UPPER CRITICAL FIELD OF MGB2 SUPERCONDUCTORS

参考文献