用离子束辅助沉积方法(IBAD)制备MoS2-Ag和MoS2-Ta复合膜以及MoS2膜.用XPS分别检测在相对湿度100%室温环境下存放45天和室温去离子水浸泡158h以及在430℃加热1h后的三种膜中Mo、S元素的电子结构.数据表明:掺有Ag、Ta元素的MoS2复合膜抗氧化特性远优于同种工艺条件下制备的纯MoS2膜.
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