使用工业射频等离子体化学气相沉积(RF-PCVD)设备,通过控制合理的工艺参数,在不同的基体负偏压下,分别制备出了Si-B-N非晶以及含有h-BN、c-BN显著结晶相的Si-B-N复合薄膜.提出了这两种不同晶形薄膜的形成模型.
参考文献
| [1] | 田民波;刘德令.薄膜科学与技术手册[M].北京:机械工业出版社,1991 |
| [2] | Nayal B B .Growth of BN film on Si substrate by carbothermic reduction of boric acid in nitrogen glow discharge plasma[J].Journal of Materials Science Letters,1995,14:337. |
| [3] | Shapoval S Y et al.Cubic boron nitride films deposited by electron cyclotron resonance plasma[J].Applied Physics Letters,1990,57(18):1885. |
| [4] | Kawata K .Development of mass-production-type plasma chemical vapoour deposition equipment and its application to various dies[J].Surface and Coatings Technology,1992,54-55:604-608. |
| [5] | 赵华侨.等离子体化学与工艺[M].合肥:中国科学技术大学出版社,1993 |
| [6] | Brown C.Introduction to Electrical Discharges[C].John Wiley & Sons Inc New York,1986 |
| [7] | Mchenzie D R.Compressive stress induced formation of cubic boron nitride[J].Diamond and Related Materials,1993(02):970. |
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