在外加电场的条件下,利用物理热蒸发法制备出定向排列的非晶硅纳米线,借助扫描电镜、X射线能谱分析仪和透射电镜等对硅纳米线进行了研究.结果表明:定向排列的硅纳米线以两种形式存在,一种是分散的平行排列,另一种是象麻花状的定向排列.同时,硅纳米线一般都处在两个结点之间;当电场不稳定时,可得到部分分叉的硅纳米线.
参考文献
[1] | 张亚利,郭玉国,孙典亭.纳米线研究进展(2):纳米线的表征与性能(续上期)[J].材料科学与工程,2001(02):89-94. |
[2] | 张信义 .准一维纳米材料有序微阵列体系的模板合成及表征[D].中国科学院固体物理研究所,2001. |
[3] | Tang Y H;Zhang Y F;Wang N et al.Morphology of Si nanowires synthesized by high temperature laser ablation[J].Journal of Applied Physics,1999,85:317-320. |
[4] | N. Wang;Y. H. Tang;Y. F. Zhang;C. S. Lee;I. Bello;S. T. Lee .Si nanowires grown from silicon oxide[J].Chemical Physics Letters,1999(2):237-242. |
[5] | Wang N.;Zhang YF.;Yu DP.;Lee CS.;Bello I.;Lee ST.;Tang YH. .Transmission electron microscopy evidence of the defect structure in Si nanowires synthesized by laser ablation[J].Chemical Physics Letters,1998(5-6):368-372. |
[6] | Yu DP.;Hang QL.;Yan HF.;Xu J.;Xi ZH.;Feng SQ.;Xing YJ. .Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism[J].Physica, E. Low-dimensional systems & nanostructures,2001(2):305-309. |
[7] | Chen XH.;Xing YJ.;Xu J.;Xiang J.;Yu DP. .Rational growth of highly oriented amorphous silicon nanowire films[J].Chemical Physics Letters,2003(5-6):626-630. |
[8] | Meng GW.;Peng XS.;Wang YW.;Wang CZ.;Wang XF.;Zhang LD. .Synthesis and photoluminescence of aligned SiOx nanowire arrays[J].Applied physics, B. Lasers and optics,2003(1):119-121. |
[9] | Sun SH.;Meng GW.;Zhang MG.;Tian YT.;Xie T.;Zhang LD. .Preparation and characterization of oriented silica nanowires[J].Solid State Communications,2003(8):287-290. |
[10] | Lu M.;Li MK.;Kong LB.;Guo XY.;Li HL. .Silicon quantum-wires arrays synthesized by chemical vapor deposition and its micro-structural properties[J].Chemical Physics Letters,2003(5-6):542-547. |
[11] | 薛增泉;吴全德;李洁.薄膜物理学[M].北京:电子工业出版社,1991 |
[12] | 范宏昌.热学[M].北京:科学出版社,2003 |
[13] | 周奇.连续媒质电动力学[M].北京:人民教育出版社,1956 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%