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[1] 黄榕旭,蒋聚小,郑国祥,俞宏坤,任云珠,徐蓓蕾.VLSI中钛硅化物肖特基接触特性与退火条件[J].固体电子学研究与进展,2001(04):415-423.
[2] S. Beckman;B. A. Cook;M. Akinc .An analysis of electrical resistivity of compositions within the Mo-Si-B ternary system part II: Multi-phase composites[J].Materials Science & Engineering, A. Structural Materials: Properties, Misrostructure and Processing,2001(1/2):94-104.
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[4] Song X P;Zhou T F;Zhao S Y et al.Effect of annealing temperature on the microstructure and stress of Al film[J].J Met Sci & Eng,2003,21(05):1.
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