用SEM方法观察分析了CVD金刚石薄膜表面的缺陷形貌和结构,直观的两种缺陷为孪晶和孔洞.孪晶反映了晶粒的不完整性,它的产生取决于气相中活性分子的浓度与生长表面活性位数目的比值,孪晶比率随碳源浓度升高和衬底温度的降低而增大;孔洞反映了膜的不致密性,其产生与膜生长速率和衬底表面初始成核密度切相关,孔洞密度随碳源浓度升高和衬底温度的升高而增大.
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