本文采用物理气相沉积(PVD)法在不同预处理的Si(100)衬底上沉积了C60膜,并利用AFM和XRD研究了其生长特征和结构特性.结果表明,C60膜的生长特性不仅与C60分子的移动性和衬底的表面性质等多种因素有关,而且还受衬底表面先前淀积的C60膜的有序性影响;H-Si(100)面上生长的C60膜与普通抛光Si(100)面上的相比更具有*2111*3取向.
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