用提拉法生长的GdCa4O(BO3)3晶体的结构缺陷研究

人工晶体学报, 2000, 29(4): 350-354. doi: 10.3969/j.issn.1000-985X.2000.04.010

用提拉法生长的GdCa4O(BO3)3晶体的结构缺陷研究

张树君 ^1, , 张吉果 ^2, , 程振祥 ^3, , 韩建儒 ^4, , 陈焕矗 ^5,

1.山东大学晶体材料国家重点实验室,济南,250100

2.山东大学晶体材料国家重点实验室,济南,250100

3.山东大学晶体材料国家重点实验室,济南,250100

4.山东大学晶体材料国家重点实验室,济南,250100

5.山东大学晶体材料国家重点实验室,济南,250100

基金项目: 高等学校博士学科点专项科研项目

关键词： GdCOB晶体 , 化学腐蚀 , 位错 , 自发极化

Investigation on Defects in GdCa4O(BO3)3 Crystal Grown by Czochralski Method

利用相衬显微镜结合化学腐蚀法,进行了沿 010 方向提拉生长的GdCa4O(BO3)3(GdCOB)晶体中的缺陷观察.发现位错是 010 方向生长的晶体中的重要缺陷.在不同方向的晶体切片上观察了螺位错和刃位错蚀坑,位错塞积,平底蚀坑及尖底蚀坑.位错密度随晶体长度的变化而变化.在晶体的尾部观测到位错密度为103/cm2,而在晶体的初始部位位错密度很低,只有40/cm2.在晶体的X,Z及 401 方向的切片的正反两面观察到的位错蚀坑现象完全不同,可以认为GdCOB晶体为单畴极性晶体,自发极化方向沿z轴方向.

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材料期刊网

用提拉法生长的GdCa4O(BO3)3晶体的结构缺陷研究

Investigation on Defects in GdCa4O(BO3)3 Crystal Grown by Czochralski Method

参考文献