采用二温区气相输运温度振荡方法合成了高纯单相致密的AgGaS2多晶，计算出晶格常数a＝5.7535nm,c＝10.3008nm，以及S原子位置x＝0.279，与PDF值相差很小，表明其是高质量的多晶原料。以此为原料用改进Bridgman法生长出直径15mm长度30mm的单晶体，经外形观测、解理试验和X射线衍射分析表明其是结晶完整的单晶体。
High-pure AgGaS2 polycrystal of single-phase and high-density has been synthesized by two-zone vapor-transporting and temperature-oscillating method.The lattice constant and the location of S atom were calculated to be a＝5.753nm,c＝10.3008nm and x＝0.279,with little discrepancy comparing to PDF value,which showed the high-quality of our synthesized polycrystal.Single crystal with 15mm in diameter and 30mm in length has also been grown by modified Bridgman method.By observation on appearance,X-ray diffractin on cleavage faces,it showed that the crystal is crystallized with good integrality.
参考文献
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