声光晶体TeO2的生长及缺陷研究

人工晶体学报, 2001, 30(1): 93-98. doi: 10.3969/j.issn.1000-985X.2001.01.016

声光晶体TeO2的生长及缺陷研究

季小红 ^1, , 桑文斌 ^2, , 刘冬华 ^3, , 李冬梅 ^4, , 钱永彪 ^5, , 史伟民 ^6, , 闵嘉华 ^7,

1.上海大学嘉定校区电子信息材料系,

2.上海大学嘉定校区电子信息材料系,

3.上海大学嘉定校区电子信息材料系,

4.上海大学嘉定校区电子信息材料系,

5.上海大学嘉定校区电子信息材料系,

6.上海大学嘉定校区电子信息材料系,

7.上海大学嘉定校区电子信息材料系,

关键词：声光晶体 , TeO2晶体 , 晶体缺陷 , 工艺参数

Study on Czochralski Growth of TeO2 Single Crystal and Defects

本文研究了直拉TeO2晶体中的主要晶体缺陷形成机理，讨论分析了TeO2单晶生长的工艺参数对晶体缺陷的影响。结果表明：晶体裂缝主要与温度梯度有关，温度梯度大于20～25℃/cm及出现界面翻转时，易造成晶体的开裂，位错密度增加；晶体中的包裹体主要为气态包裹体，它的形成主要与籽晶的转速和晶体的提拉速度有关，转速15～18r/min，拉速0.55mm/h，固液界面微凹，可以减少晶体中的气态包裹体；晶体台阶由晶体生长过程中温度和生长速度的起伏引起，当台阶间距较宽时，易形成包裹体。

The formation mechanism of main defects in TeO2 single crystals grown by Czochralski technique and the effects of growth parameters on defects have been studied in this paper.The results showed that the cracking in TeO2 single crystal is mainly related to the temperature gradient.To avoid the crystal being cracked and to decrease the dislocation density,the crystal can be grown under temperature gradient of 20-25℃/cm.And the incorporation of gas inclusions into the crystal is due to the pulling rate and the seed rotation rate.The crystal without bubbles can be obtained when a rotation rate of 15-18r/min and a pulling rate of 0.55mm/h are employed,which can lead a concave solid-liquid interface.The reason for growth steps in crystal can be explained by the instability of temperature and growth speed during growth process.

参考文献

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