本文报道了用改进的垂直气相法(多级提纯垂直气相法)生长富Cd的CdSe单晶体，并对晶体的性能进行了观测，其电阻率为107Ωcm量级，电子陷阱浓度为108cm-3量级，第一次报道了(110)面的腐蚀形貌。结果表明：采用这种方法制备CdSe单晶，设备简单，易于操作，在提纯和生长过程中不需要转移原料，有利于减少晶体中的杂质含量，降低位错密度，改善晶体的电学性能。多级提纯垂直气相法是一种有前途的CdSe单晶体生长的新方法。
High quality CdSe single crystals with excess Cd(10mm in diameter and 45mm in length) were grown using modified sublimation technique,i.e.vertical unseeded vapor growth with multi-step purification.Purification of polycrystalline material and growth of CdSe single crystals were carried on in the same quartz ampoule.The resistivity of the crystal was measured to be of 107—108Ω cm order,and the electron trap densities of 108cm-3.The etch pit patterns of (110)face was reported for the first time.The results showed that this was a new and promising method for growing high quality CdSe single crystals.
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