用简单化学反应的方法,采用非空间限制的条件,成功地在LaAlO3衬底上制备了GaN纳米线.分别用X射线粉末衍射、场发射扫描电镜和高分辩电镜等对其成分、形貌及其结构进行了表征.制备的GaN纳米线直径大部分为10~50nm,且多呈平直光滑状态;纳米线的成分为六方晶系氮化镓晶体.
参考文献
[1] | Nakamura S .The Roles of Structural Imperfections in InGaN-Based Blue Light-emitting Diodes and Laser Diodes[J].Science,1999,281:956-961. |
[2] | Fasol G .Room-temperature Blue Gallium Nitride Laser Diode[J].Science,1996,272:1751-1752. |
[3] | pankove J I;Miller E A;Berkeyheiser J E .GaN Electroluminescent Diodes[J].RCA Review,1971,32:383-392. |
[4] | Ponce F A;Bour D P .[J].Nitride-based Semiconductors for Blue and Green Light-emitting Devices Nature,1997,386:351-359. |
[5] | Xie Y;Qian Y;Wang W;Zhang S, Zhang Y .A Benzene-thermal Synthetic Route to Nanocrystalline GaN[J].Science,1996,272:1926-1927. |
[6] | Han W;Fan S;Li Q;Hu Y .Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-confined Reaction[J].Science,1997,277:1287-1289. |
[7] | G. S. Cheng;L. D. Zhang;Y. Zhu .Large-scale synthesis of single crystalline gallium nitride nanowires[J].Applied physics letters,1999(16):2455-2457. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%