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用简单化学反应的方法,采用非空间限制的条件,成功地在LaAlO3衬底上制备了GaN纳米线.分别用X射线粉末衍射、场发射扫描电镜和高分辩电镜等对其成分、形貌及其结构进行了表征.制备的GaN纳米线直径大部分为10~50nm,且多呈平直光滑状态;纳米线的成分为六方晶系氮化镓晶体.

参考文献

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