本文报道了采用化学气相沉积法制备红外ZnS体块晶体的工艺及其性能.并用傅立叶红外光谱仪测试了材料的红外性能,研究了晶体缺陷对材料红外透过率的影响.结果表明:通过优化生长工艺,使反应室的压力在500～1000Pa之间变化,沉积温度控制在550～650℃之间,可以制备出厚度均匀,红外透过率(3-5μm和8～12μm)在70%以上,尺寸达250mm×250mm×15mm高质量的ZnS体块晶体.
The preparation and characterization of infrared ZnS bulk crystal by chemical vapor deposition (CVD) method is reported in this paper. Deposition process consists of the nucleation and growth process of ZnS. The chamber pressure is kept at 500-1000Pa, the substrate temperature is controlled within 550-650℃. The active raw gases of H2S and optimum technique for ZnS growth are used. The size of infrared ZnS bulk crystal is up to 250mm×250mm×15mm . The structural and optical properties of the crystal have been analyzed by using infrared spectroscopy. The results show that the crystal obtained under these conditions is highly uniform and transparent. The transmittance from 3μm to 5μm and from 8μm to 12μm is over 70%.
参考文献
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