ZnO是一种重要的紫外半导体光电器件材料.本文用金属有机化合物在玻璃管内高温加热分解迅速拉制的方法,在直径为169μm的玻璃丝内成功的制备了直径为13μm左右的ZnO.并用X射线衍射和PL谱研究了玻璃微丝内的ZnO.结果发现ZnO为多晶且具有六方形结构,峰值波长在370nm的PL谱表明所制得的ZnO为体材料.
参考文献
| [1] | MASAHIRO WATANABE;Yasuhisa Maed Okano .Epitaxial Growth and Ultravoilet Photoluminesence of CaF2/ZnO2/CaF2 Heterostructure on Si (111)[J].Japanese Journal of Applied Physics,2000,39(111):500-502. |
| [2] | Dijken van A;Meulenkamp et al.Identification of the Transition Responsible for the Visible Emission in ZnO Using Quantum Size Effect[J].Journal of Luminescence,2000,90:123-128. |
| [3] | Hanto H;Minami T;Takata S .Magnetoconcentration effect at Auger Recombination of Current Carriers[J].Physica Status Solidi,1981,A65:K131. |
| [4] | Triboulet R.;Barbe M.;Lemasson P.;Mora-Sero I.;Munoz V.;N'tep JM. .Some fundamentals of the vapor and solution growth of ZnSe and ZnO[J].Journal of Crystal Growth,1999(Pt.2):968-974. |
| [5] | Aronovish J;Ortiz A;Bube R H .Optical and Electrical Properties of ZnO Films Prepared by Spray Pyrolysis for Solar Cell Application[J].Journal of Vacuum Science and Technology,1979,16:994. |
| [6] | Vispute RD.;Choopun S.;Sharma RP.;Venkatesan T.;He M. Tang X.;Halpern JB.;Spencer MG.;Li YX.;Salamanca-Riba LG.;Iliadis AA. Jones KA.;Talyansky V. .Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices[J].Applied physics letters,1998(3):348-350. |
| [7] | Bethke S;Pan H;Wesseis B W .Luminesence of Heteroepitaxial Zinc Oxide[J].Applied Physics Letters,1988,52:138. |
| [8] | Chen Y;Bagnall M D;Koh J H;park K T,etal .Plasma Assisted Molecular Beam Epitaxy of ZnO on c-plane Sapphire:Growth and Charaterization[J].Journal of Applied Physics,1998,84:3912. |
| [9] | Zu P.;Wong GKL.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Tang ZK. .ULTRAVIOLET SPONTANEOUS AND STIMULATED EMISSIONS FROM ZNO MICROCRYSTALLITE THIN FILMS AT ROOM TEMPERATURE[J].Solid State Communications,1997(8):459-463. |
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