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对电阻加热引上法和感应加热引上法生长β′-Gd2(MoO4)3晶体的实验结果进行了比较,分析了两种方法生长晶体过程中熔体过冷和组分过冷的情况.研究认为组分过冷主要与生长过程中MoO3的挥发、Gd2(MoO4)3熔体的粘度及固液界面的温度梯度有关,并认为感应加热引上法较之电阻加热引上法容易得到优质晶体.

参考文献

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[6] 袁清习,赵春华,殷晓峰,罗卫平,徐军,潘守夔.β′-钼酸钆晶体的生长与畴结构观察[J].人工晶体学报,2001(03):273-279.
[7] Qingxi Yuan;Chunhua Zhao;Weiping Luo .Crystal growth of β'-Gd_2(MoO_4)_3 and in situ observation of its domain structure by the microscope and the synchrotron X-ray topography[J].Journal of Crystal Growth,2001(4):717-722.
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