本文研究了HFCVD系统中覆盖有C60膜的Si(100)衬底上金刚石的成核与形貌特征.结果表明,C60能大幅度提高金刚石成核密度;C60氢化预处理能大幅度促进金刚石成核,但要合理控制CH4的浓度和预处理时间;随衬底温度的升高,金刚石晶粒由球状变为菜花状聚晶.
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