应用微波电子回旋共振化学气相沉积(MWECR CVD)方法,在较高速度下沉积了α-Si:H薄膜,用FTIR红外谱仪研究了α-Si:H薄膜的结构特性随H2/SiH4、沉积温度和沉积速率变化关系,并对2000cm-1附近的特征吸收峰用高斯函数进行了拟合分析,获得了沉积高质量α-Si:H薄膜的最佳工艺条件.
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