在写入光分别为e光和o光时,实验测量了Ce:KNSBN晶体两波耦合响应时间与总写入光强、写入光强比和写入光夹角的关系,实验数据与理论拟合结果相吻合,并由晶体响应时间特性获得了晶体有效电光系数和有效光折变电荷密度参数.
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