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纳米半导体量子点以其所具有的新颖光电性质与输运特性,正在各类量子功能器件中获得成功应用.作为纳米量子点的一种主要制备工艺,自组织生长技术正在受到人们的普遍重视.而如何实现具有尺寸与密度可控纳米量子点的自组织生长,更为材料物理学家们所广泛关注.因为这是由自组织方法形成的量子点最终能否器件实用化的关键.本文简要介绍了有序纳米量子点的自组织生长及其新近研究进展.

参考文献

[1] 彭英才.纳米量子点结构的自组织生长[J].固体电子学研究与进展,2000(02):160-168.
[2] Xinwei Zhao;Shuji Komuro;Hideo Isshiki;Yoshinobu Aoyagi;Takuo Sugano .Fabrication and stimulated emission of Er-doped nanocrystalline Si waveguides formed on Si substrates by laser ablation[J].Applied physics letters,1999(1):120-122.
[3] Dutta A.;Oda S.;Hayafune Y. .Single electron memory devices based on plasma-derived silicon nanocrystals[J].Japanese journal of applied physics,2000(8B):L855-L857.
[4] T. H. Wang;Y. Aoyagi .Single-electron charging in a parallel dot structure[J].Applied physics letters,2001(5):634-636.
[5] Fujiwara A;Takahashi Y .Manipulation of elementary charge in a silicon charge-coupled device[J].Nature,2001(6828):560-562.
[6] 彭英才,X.W.Zhao,傅广生.Si基纳米发光材料的研究进展[J].科学通报,2002(10):721-730.
[7] N. Usami;M. Miura;Y. Ito .Drastic increase of the density of Ge islands by capping with a thin Si layer[J].Applied physics letters,2000(2):217-219.
[8] Zhao XW.;Aoyagi Y.;Sugano T.;Komuro S.;Isshiki H. .Formation and device application of Er-doped nanocrystalline Si using laser ablation[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(1/3):197-201.
[9] M. Zacharias;J. Heitmann;R. Scholz;U. Kahler;M. Schmidt;J. Blasing .Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO_(2) superlattice approach[J].Applied physics letters,2002(4):661-663.
[10] Nakagawa K;Fukuda M;Miyazaki S et al.Self-assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition[J].Materials Research Society Symposium Proceedings,1997,452:243-248.
[11] S. Miyazaki;Y. Hamamoto;E. Yoshida;M. Ikeda;M. Hirose .Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1/2):55-59.
[12] 荻野俊郎;本间芳和 .半导体表面的原子结构设计(日文)[J].日本物理学会志(日本),2001(56):83-90.
[13] G. Jin;J. L. Liu;K. L. Wang .Regimented placement of self-assembled Ge dots on selectively grown Si mesas[J].Applied physics letters,2000(24):3591-3593.
[14] Verscan L;Stoica T .Luminescence of Laterally Ordered Ge Islands along 〈100〉 Direction[J].Journal of Applied Physics,2002,91(12):10119-10126.
[15] Leroy F;Eymery J;Gentile P et al.Ordering of Ge Quantum Dots with Buried Si Dislocation Networks[J].Applied Physics Letters,2002,80(17):3078-3080.
[16] Jia JF.;Wang JZ.;Liu X.;Wang XS.;Xue QK.;Li ZQ.;Zhang SB. .Spontaneous assembly of perfectly ordered identical-size nanocluster arrays[J].Nanotechnology,2002(6):736-740.
[17] 村田好正.自组织化工艺技术(日文)[J].培風館,2001:255-260.
[18] 小口信行 .利用液滴外延法的GaAs量子点的制备(日文)[J].应用物理,1996(65):392-396.
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