通过对高压液封直拉法单晶生长过程的热传输和影响熔体温度起伏的几个关键因素的分析,研究适合生长(100)晶向磷化铟单晶的热场系统,有效地降低了孪晶产生的几率,重复地生长出了整锭掺硫和掺铁的、直径为50mm和76mm的(100)磷化铟单晶.测试结果表明我们生长(100)磷化铟单晶的热场在生长过程中使晶锭保持较为平坦的固液界面,可稳定地获得具有低的缺陷密度和良好的电学均匀性的高质量磷化铟单晶材料.
参考文献
| [1] | Gottschalk H;Patzer G;Alexander H .Stacking Fault Energy and Ionicity of Cubic III-V Compounds[J].Physica Status Solidi A,1978(45):207. |
| [2] | Bonner W A .InP Synthesis and LEC Growth of Twin-free Crystals[J].Journal of Crystal Growth,1981,54:21. |
| [3] | Iseler G W .Liquid-encapsulated Czochralski Growth of InP Crystals[J].Journal of Crystal Growth,1981,54:16. |
| [4] | Chen T P;Guo Y D;Huang T S;Chen L J. .Characteristics of Facets in Si-doped GaAs Crystals Grown by Horizontal Bridgman Technique[J].Journal of Crystal Growth,1990,103:243. |
| [5] | Shibata M;Sasaki Y et al.Observation of Edge-facets in <100> InP Crystals Grown by LEC Method[J].Journal of Crystal Growth,1990,102:557. |
| [6] | Oda O;Katagiri K;Shinohara K;Katsura S, Takashi Y, Kainosho K, Kohiro K, Hirano R. .Indium Phosphide and Related Materials: Crystal Growth and Characterization[J].Semiconductors and Semimetals,1991,31:93. |
| [7] | Tower J P;Robin R;Pearah P J;Ware R M. .Interface Shape and Crystallinity in LEC GaAs[J].Journal of Crystal Growth,1991,114:665. |
| [8] | Hurle DTJ. .A MECHANISM FOR TWIN FORMATION DURING CZOCHRALSKI AND ENCAPSULATED VERTICAL BRIDGMAN GROWTH OF III-V COMPOUND SEMICONDUCTORS[J].Journal of Crystal Growth,1995(3/4):239-250. |
| [9] | Chung H.;Larson DJ.;Hurle DTJ.;Bliss DF.;Prasad V.;Dudley M. .The mechanism of growth-twin formation in zincblende crystals: new insights from a study of magnetic liquid encapsulated Czochralski-grown InP single crystals[J].Journal of Crystal Growth,1998(1):9-17. |
| [10] | Dudley M.;Guo Y.;Huang XR.;Chung H.;Hurle DTJ. Bliss DF.;Raghothamachar B. .The influence of polarity on twinning in zincblende structure crystals: new insights from a study of magnetic liquid encapsulated, Czochralski grown InP single crystals[J].Journal of Crystal Growth,1998(1/2):1-10. |
| [11] | Amon J.;Muller G.;Dumke F. .Influence of the crucible shape on the formation of facets and twins in the growth of GaAs by the vertical gradient freeze technique[J].Journal of Crystal Growth,1998(1):1-8. |
| [12] | Abrahams M S;Buiocchi C J .Etching of Dislocations on the Low-index Faces of GaAs[J].Journal of Applied Physics,1965,36:2855. |
| [13] | Miller W;Rehse U et al.Influence of Melt Convection on the Interface during Czochralski Crystal Growth[J].Solid-State Electronics,2000,44:825. |
| [14] | Meduoye G O;Evans K E;Bacon DJ .Modelling of the Growth of GaAs by the LEC Technique II. Thermal Stress Distribution and Influence of Interface Shape[J].Journal of Crystal Growth,1989,97:709. |
| [15] | LAMBROPOULOS J C;Delametter C N .The Effect of Interface Shape on Thermal Stress during Czochralski Crystal Growth[J].Journal of Crystal Growth,1988,92:390. |
| [16] | Schvezov C E;Samarasekera I V;Weinberg F .Temperature and Stress Field Calculation in Indium Phosphide during LEC Growth[J].Journal of Crystal Growth,1989,92:479. |
| [17] | Zou YF.;Zhang H.;Prasad V.;Bliss DF.;Wang GX. .MACRO-SEGREGATION, DYNAMICS OF INTERFACE AND STRESSES IN HIGH PRESSURE LEC GROWN CRYSTALS[J].Journal of Crystal Growth,1997(3/4):524-533. |
| [18] | Bliss D F;Bryant G;Antypas G;Raghothamachar B, Dhanaraj G, Dudley M, Zhao J.X-Ray Characterization of Bulk InP:S Crystals by LEC in a Low Thermal Gradient[A].IEEE Transactions,2000:530. |
| [19] | Hirano R;Noda A .Growth of Low Etch Pit Density (EPD) InP Crystals[J].Japanese Journal of Applied Physics,2002(41):987. |
| [20] | Hirano R .Growth of Low Etch Pit Density Homogeneous 2" InP Crystals Using a Newly Developed Thermal Baffle[J].Japanese Journal of Applied Physics,1999,38:969. |
| [21] | Zeisse C R;Antypas G A;Hopkins C .Electron and Iron Concentration in Semi-insulating Indium Phosphide[J].Journal of Crystal Growth,1983,64:217. |
| [22] | Müller G .InP-the Basic Material of Integrated Optoelectronics for Fiber Communication Systems[J].Physical Scripta,1991,T35:201. |
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