计算模拟了半导体材料碲锌镉垂直布里奇曼法单晶体生长过程,以等温线图展示了固液界面形状的演化,分析了温度梯度和坩埚移动速率对固液界面形状以及晶体内组分偏析的影响.计算结果表明在凝固的初始段,固液界面的凹陷深度较大,随后有较大幅度的减小.整个凝固过程中固液界面的凹陷深度值有一定的波动性.提高温度梯度、降低坩埚移动速率均能有效地减小固液界面的凹陷,改善晶体的径向组分偏析.
参考文献
[1] | Kennedey J J;Amirtharaj P M;Boyd P R;Qudri S B, Dobbyn R C, Long G G .Growth and Characterization of Cd1-xZnxTe and Hg1-yZnyTe[J].Journal of Crystal Growth,1988,86:93-99. |
[2] | Tanaka A;Masa Y;Seto S;Kawasaki T .Zinc and Selenium Co-doped CdTe Substrates Lattice Matched to HgCdTe[J].Journal of Crystal Growth,1989,94:166-170. |
[3] | Sen S;Stanard J E .Developments in the Bulk Growth of Cd1-xZnxTe for Substrates[J].Progress in Crystal Growth and Characterization of Materials,1994,29:253-273. |
[4] | Azoulay M;Rotter S;Gafni G;Tenne R, Roth M .Zinc Segregation in CdZnTe Grown under Cd/Zn Partial Pressure Control[J].Journal of Crystal Growth,1992,117:276-280. |
[5] | T.S. LEE;S.B. LEE;J.M. KIM;J.S. KIM;S.H. SUH;J.H. SONG;I.H. PARK;S.U. KIM;M.J. PARK .Vertical Bridgman Techniques to Homogenize Zinc Composition of CdZnTe Substrates[J].Journal of Electronic Materials,1995(9):1057-1059. |
[6] | Mühlberg M;Rudolph P;Genzel C;Wermke B, Becker U .Crystalline and Chemical Quality of CdTe and Cd1-xZnxTe Grown by the Bridgman Method in Low Temperature Gradients[J].Journal of Crystal Growth,1990,101:275-280. |
[7] | Cheuvart P;El-Hanani U;Schneider D;Triboulet R .CdTe and CdZnTe Crystal Grown by Horizontal Bridgman Technique[J].Journal of Crystal Growth,1990,101:270-274. |
[8] | Lu Y C;Shiau J J;Fiegelson R S;Route R K .Effect of Vibrational Stirring on the Quality of Bridgman-grown CdTe[J].Journal of Crystal Growth,1990,102:807-813. |
[9] | Butler J F;Doty F P;Apotovsky B .Verger L. γ-ray and X-ray Detectors Manufactured from Cd1-xZnxTe Grown by a High-pressure Bridgman Method[J].Materials Science and Engineering B,1993,16:291-295. |
[10] | Capper P .The Role of Accelerated Crucible Rotation in the Growth of Hg1-xCdxTe and CdTe/CdZnTe[J].Progress in Crystal Growth and Characterization of Materials,1994,28:1-55. |
[11] | Pafceniuk C;Weinberg F;Samarasekera I V;Schvezov C, Li L .Measured Critical Resolved Shear Stress and Calculated Temperature and Stress Fields during Growth of CdZnTe[J].Journal of Crystal Growth,1992,119:261-270. |
[12] | Kuppurao S.;Derby JJ.;Brandon S. .MODELING THE VERTICAL BRIDGMAN GROWTH OF CADMIUM ZINC TELLURIDE .1. QUASI-STEADY ANALYSIS OF HEAT TRANSFER AND CONVECTION[J].Journal of Crystal Growth,1995(1/2):93-102. |
[13] | Martinez-Tomas C.;Triboulet R.;Munoz V. .Heat transfer simulation in a vertical Bridgman CdTe growth configuration[J].Journal of Crystal Growth,1999(3):435-442. |
[14] | Martinez-Tomas C;Munoz V .CdTe Crystal Growth Process by Bridgman Method: Numerical Simulation[J].Journal of Crystal Growth,2001,222:435-451. |
[15] | Numerical simulation of the convection during ACRT[J].自然科学进展(英文版),1997(02):215. |
[16] | Sen S;Konkel W H;Tighe S J;Bland L G, Sharma S R, Taylor R E .Crystal Growth of Large-area Single-crystal CdTe and CdZnTe by the Computer-controlled Vertical Modified-Bridgman Process[J].Journal of Crystal Growth,1988,86:111-117. |
[17] | Rudolph P;Muhlberg M .Basic Problems of Vertical Bridgman Growth of CdTe[J].Materials Science and Engineering B,1993,16:8-16. |
[18] | Aslam N;Jones E;Noakes T C Q;Mullin J B, Willoughby F W .The Diffusion of Zinc in Cadmium Telluride[J].Journal of Crystal Growth,1992,117:249-253. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%