ZnO是一种新型的Ⅱ-Ⅵ族直接带隙化合物材料,是一种很有潜力的短波长光电器件材料.当ZnO薄膜具有良好的c轴取向和晶格结构时,可得到优良的光电性能比如紫外光受激发射.本实验用XRD和SEM研究了工艺条件如基片温度、氩氧比及退火工艺对ZnO薄膜结构特性的影响.结果表明在基片温度250℃、氩氧比为1∶4的条件下,可得到结晶质量良好的ZnO薄膜;通过退火可以使薄膜应力得到驰豫,降低缺陷浓度,改善薄膜的结构特性.本实验采用直流磁控溅射的方法,最终在(100)硅衬底基片上制备出了高c轴取向、晶粒尺寸约70nm的ZnO薄膜.
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