在固液界面迁移理论和SODCM模型(二次反扩散补偿法)的基础上,本文提出采用垂直Bridgman法变速生长Hg1-xMnxTe晶体,并从理论和实验两方面对该方法的可行性进行了验证.与传统垂直Bridgman法的对比实验结果表明,该方法可以在提高轴向组分均匀性的前提下增大抽拉速度,进而提高晶体生长速度.
参考文献
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