本文在对红外非线性光学材料AgGaS2的DTA谱线进行分析的基础上,对AgGaS2的结晶习性进行了研究.对传统的Bridgman-Stockbarger法进行了改进,设计出新的三温区立式炉,炉内温度梯度达到生长晶体的要求.根据自发成核的几何淘汰理论,针对AgGaS2的结晶特点,设计出适宜的石英生长安瓿,形状能够满足AgGaS2晶体结晶习性的需要,成功地生长出完整性较好的尺寸达10mm×25mm的AgGaS2单晶体.
参考文献
[1] | Feigelson R S;Route R K .Recent Developments in the Growth of Chalcopyritc Crystals for Nonlinear Infrared Applications[J].Optical Engineering,1987,26(02):113-119. |
[2] | Niwa E.;Masumoto K. .Growth of AgGaS2 single crystals by a self-seeding vertical gradient freezing method[J].Journal of Crystal Growth,1998(1/2):354-360. |
[3] | Catella G C;Burtage D .Crystal Growth and Optical Properties of AgGaS2 and AgGaSe2[J].MRS Bulletin,1998,7:28-36. |
[4] | Zhao BJ.;Yu FL.;Li HY.;Gao DY.;Li ZH.;Zhu SF. .Polycrystalline synthesis and single crystal growth of AgGaS2[J].Crystal Research and Technology: Journal of Experimental and Industrial Crystallography,1998(6):943-948. |
[5] | Laudise R A.The Growth of Single Crystals[M].Prentice-Hall,Inc,1970 |
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