升华法生长大直径碳化硅(SiC)单晶一直是近年来国内外研究的重点,本文对Si-C系中的Si,Si2,Si3,C,C2,C3,C4,C5,SiC,Si2C,SiC2等气相物种的热力学平衡过程进行了研究,发现SiC生长体系中的主要物种为Si,Si2C,SiC2.生长初期Si的分压较高,从而SiC生长为富硅生长模式.对外加气体进行研究发现,氩气为最好的外加气体,它既可以有效地抑制Si物质流传输,又可以减缓扩散系数随温度升高而递减的趋势.建立了简单一维传输模型,对三个主要物种的动力学输运过程进行了研究,计算得到了两个温度梯度下的主要物种的物质流密度.
参考文献
[1] | Dieter Hofman H;Matthias Muller H .Prospects of the Use Liquid Phase Techniques for the Growth of Bulk Silicon Carbide Crystals[J].Materials Science and Engineering B,1999,61-62:29-39. |
[2] | Garcon I;etal .Study of SiC Single-crystal Sublimation Growth Conditions[J].Materials Science and Engineering B,1995,29:90-93. |
[3] | Tairov Yu M et al.Investigation of Growth Processes of Ingots of Silicon Carbide Single Crystals[J].Journal of Crystal Growth,1978,43:209-212. |
[4] | P.J.Wellmann;D.Hofmann;L.Kadinski .Impact of source material on silicon carbide vapor transport growth process[J].Journal of Crystal Growth,2001(2/4):312-316. |
[5] | Tairov Yu M;Tsvetkov V F .General Principles of Growing Large-size Single Crystals of Various Silicon Carbide Polytypes[J].Journal of Crystal Growth,1981,52:146-150. |
[6] | Karpov SY.;Ramm MS.;Makarov YN. .SIMULATION OF SUBLIMATION GROWTH OF SIC SINGLE CRYSTALS[J].Physica status solidi, B. Basic research,1997(1):201-220. |
[7] | 叶大伦.实用无机物热力学数据手册[M].北京:冶金工业出版社,1981 |
[8] | Chase M W Jr.NIST-JANAF Themochemical Tables, Fourth Edition[J].Journal of Physical and Chemical Reference Data,1998:1-1951. |
[9] | 应纯同.气体输运理论及应用[M].北京:清华大学出版社,1990 |
[10] | 孟广耀.化学气相淀积与无机新材料[M].北京:科学出版社,1984 |
[11] | 秦允豪.热学[M].北京:高等教育出版社,2000 |
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