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采用同步辐射单色光形貌术观察了6H-SiC单晶中的微管缺陷,发现晶片中Burgers矢量为1c的螺位错具有较高的密度.此外,还观察到对应较大Burgers矢量的微管.基于微管附近的应变场,并根据衍射几何,模拟计算了一系列具有不同Burgers矢量的微管在形貌像中的直径,计算结果与实验观察符合较好.

参考文献

[1] Bakowski M.;Lindefelt U.;Gustafsson U. .SIMULATION OF SIC HIGH POWER DEVICES[J].Physica Status Solidi, A. Applied Research,1997(1):421-440.
[2] CARTER Jr C H;Tsvetkov VF;Glass R C;Henshall D, Brady M, Muller St G .Progress in SiC: from Material Growth to Commercial Device Development[J].Materials Science and Engineering B,1999,B61-62:1.
[3] Huang X R;Dudley M;Vetter W M;Huang W, Wang S .Direct Evidence of Micropipe-related Pure Superscrew Dislocations in SiC[J].Applied Physics Letters,1999,74:353.
[4] Giocondi J.;Skowronski M.;Balakrishna V.;Augustine G. Hobgood HM.;Hopkins RH.;Rohrer GS. .AN ATOMIC FORCE MICROSCOPY STUDY OF SUPER-DISLOCATION/MICROPIPE COMPLEXES ON THE 6H-SIC(0001) GROWTH SURFACE[J].Journal of Crystal Growth,1997(4):351-362.
[5] 徐现刚,胡小波,王继扬,蒋民华.大直径6H-SiC单晶的生长[J].人工晶体学报,2003(05):540.
[6] Frank F C .Capillary Equilibria of Dislocated Crystals[J].Acta Crystallographica,1951,4:497.
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