在不同的生长温度和载气的条件下,采用低压金属有机物气相外延方法生长了系列的InAlGaN薄膜,通过能量色散谱(EDS),高分辨X射线衍射(HRXRD)和光致发光谱(PL)对样品进行表征与分析,研究了生长工艺对InAlGaN外延层结构和光学性能的影响.发现当以氮气做载气时,样品的发光很弱并且在550nm附近存在一个很宽的深能级发光峰;当采用氮气和氢气的混合气做载气时,样品中的深能级发光峰消失且发光强度明显提高.以混合气做载气,InAlGaN薄膜中铟的组分随生长温度的升高而降低,而薄膜的结构和光学性能却提高.结合PL和HRXRD的测试结果得到了较佳的生长参数:即载气为氢气和氮气的混合气以及生长温度在850℃到870℃.
In order to improve crystal quality for growth of quaternary InAlGaN, a series of InAlGaN films were grown on GaN buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively. The PL spectra of InAlGaN show with and without the broad-deep level emission when only N2 and a N2+H2 mixture were used as carrier gas, respectively. At pressure of 1.01×104 Pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (In), aluminum (Al), gallium (Ga) and nitrogen (N2) constant. A combination of HRXRD and PL measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of N2+H2 as carrier gas.
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