本文利用低压高温MOCVD系统,成功地在Si(111)基片上外延出了具有高质量的SiC薄膜,并对其反应机理做了一些初步的研究.大部分观点认为,SiC/Si的异质外延,其最初的状态应该为Si衬底中Si的扩散.但是,本文通过在不同流量比的条件下,SiC薄膜在Si基片以及Al2O3基片上外延的比较,发现在SiC/Si的异质外延过程中起重大作用的并非Si衬底中Si的扩散,而是很大程度上作用于C向Si衬底的扩散.同时,还发现反应速率的快慢受SiH4流量所限制.当SiH4流量增加时,反应速率会明显加快,但是结晶质量会相对变差.
High-quality SiC films were successfully prepared on Si(111) substrates by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The mechanism of the heteroepitaxial SiC films on the Si substrates was studied. Many researchers supported that the initiative stage was the Si out-diffusion from the Si substrates. But from the experimental results of heteroepitaxial SiC films grown on the Si substrate and Al2O3 substrate, respectively,it is found that the dominant transport process during the growth of SiC films on the Si substrates, is the C in-diffusion rather than Si out-diffusion. In addition,the results show that the reaction rate will become faster with the increase of the SiH4 flux,but the crystallization will be weakened.
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