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报道了我们在Li2B4O7、Sr3Ga2Ge4O14、LiNbO3、LiTaO3等声表面波用压电晶体材料方面的最新研究进展.采用改进型坩埚下降法成功生长了直径3~4英寸的Li2B4O7晶体,并实现了批量生产.作为硅酸镓镧系列新型压电晶体之一,Sr3Ga2Ge4O14晶体具有最大的压电系数.报道了直径2英寸Sr3Ga2Ge4O14晶体的生长结果,测试了该晶体的压电性能.在CO2(90%)、H2(10%)混合气氛中,分别在700℃和450℃下对LN和LT晶片进行化学还原处理,成功制备了3英寸LN和LT低静电黑片,不仅减少了器件制作工序,而且使成品率提高了5~8百分点.此外,在密封坩埚中生长了低静电LiNbO3晶体,观察到一些新的现象.

Recent developments of piezocrystals, Li2B4O7, Sr3Ga2Ge4O14, LiNbO3 and LiTaO3 in our laboratory were reported in this paper. Li2B4O7 single crystals of 3 to 4 inches in diameter have been grown successfully by the modified vertical Bridgman method and mass production of large size Li2B4O7 crystals has been realized. Sr3Ga2Ge4O14 (SGG) crystal is a novel piezoelectric crystal with the largest piezoelectric constants among the langasite family. Bridgman growth of SGG crystal up to 2 inches in diameter has been reported and its piezoelectric properties have been measured. In order to improve the yield of SAW devices, pyro-free LiNbO3 and LiTaO3 wafers were prepared by chemical reduction at 700℃ and 450℃ respectively under a mixed atmosphere of CO2 and H2. Bridgman growth of LiNbO3 crystals was also investigated and some new phenomena were observed.

参考文献

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