本文主要研究了用VHF-PECVD方法制备的不同辉光功率条件下系列硅薄膜样品.喇曼测试结果显示:在不同硅烷浓度(SC)条件下,非晶到微晶的过渡区发生在不同的功率点;暗电导随晶化率也体现出不同的变化,此结果表明不同SC、不同功率制备样品的结构特性和电学特性的内在规律是不同的;另外,扫描电子显微镜的测试结果表明样品的表面呈"菜花"状和剖面为柱状的结构特征.
A series of silicon-based samples were fabricated by the very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique at various discharge powers. The results show that the transition zone occures at different discharge power for silane concentration (SC=[SiH4]/[SiH4+H2]) of 4% and 6%. Furthermore, the dark conductivity also shows different changes with the increase of the crystalline volume fraction, indicating a different relationship between the structural and electrical properties for the samples prepared at different discharge power for the different SC. In addition, the microstructure measurements of the film characterized by scanning electronic microscopy show the evident ‘cauliflower-like' surface morphology and columnar structure.
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