由于金刚石与Si有较大的表面能差,利用化学气相沉积(CVD)制备金刚石膜时,金刚石在镜面光滑的Si表面上成核困难,而负衬底偏压能够增强金刚石在镜面光滑Si表面上的成核,表明金刚石核与Si表面的结合力也得到增强.本文分析衬底负偏压引起的离子轰击对Si表面产生的影响之后,基于离子轰击使得Si衬底表面产生了微缺陷(凹坑)增大了金刚石膜与Si衬底结合的面积,理论研究了离子轰击对金刚石膜与Si衬底结合力的影响.
Owing to the large surface energy difference of diamond with silicon, the diamond nucleation on the mirror-polished silicon surface is difficult when diamond films are prepared by chemical vapor deposition. However, the nucleation can be enhanced by a negative substrate bias, indicating that the adhesive force of diamond nuclei on Si surface is improved. The ion bombardment results in a production of micro-defects(pits)on Si substrate surface and therefore the contact area of diamond film with Si surface is enlarged. Based on these results, the influence of ion bombardment on Si surface with the negative bias was analyzed and the effect of ion bombardment on the adhesive force between diamond film and Si substrate was theoretically studied.
参考文献
| [1] | Jiang X;Kages C P;Zachai R .Expitaial Diamond films on(001) Silicon Substrates[J].Applied Physics Letters,1993,62:3438-3440. |
| [2] | Hartnett T;Miller R;Montannari D;Tustison .Intermediate Layers for the Deposition of Polycrystalline Diamond Films[J].Journal of Vacuum Science and Technology A,1990,A8:2129-2136. |
| [3] | Yugo S;Kanai T;Kimura T .Generation of diamond nuclei by electric field in plasma chemical vapor deposition[J].Applied Physics Letters,1991,58:1036-1038. |
| [4] | Wang BB.;Liao KJ.;Xiao JL.;Wang WL. .Experimental and theoretical studies of diamond nucleation on silicon by biased hot filament chemical vapor deposition - art. no. 085412[J].Physical Review.B.Condensed Matter,2001(8):085412-1-085412-12. |
| [5] | Wang B B;Wang W L;Liao K J .Theoretical Analysis of Ion Bombardment Roles in Bias Enhanced Nucleation Process of CVD Diamond[J].Diamond and Related Materials,2001,10:1622-1626. |
| [6] | B. B. Wang;W. L. Wang;K. J. Liao .Micro-defects produced on a substrate by a glow discharge and the role of such defects on diamond nucleation[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(1/2):77-83. |
| [7] | 王必本,王万录,廖克俊,肖金龙,方亮.离子的轰击对Si衬底上金刚石核附着力的影响[J].物理学报,2001(02):251-255. |
| [8] | Kátai Sz;Tass Z;Hárs Gy;Deák P .Measurement of Ion Energy Distributions in the Bias Enhanced Nucleation of Chemical Vapor Deposited Diamond[J].Journal of Applied Physics,1999,86:5549-5555. |
| [9] | Zhang Tonghe;Wu Yuguang.Optimum Technology of Ion Implantation[M].北京:冶金工业出版社,1993:03-249. |
| [10] | Wang WL;Sanchez G;Polo MC;Zhang RQ;Esteve J;LANZHOU UNIV DEPT PHYS LANZHOU 730000 PEOPLES R CHINA.;SHANDONG UNIV INST OPTOELECT MAT & DEVICES SHANDONG 250100 PEOPLES R CHINA. .Nucleation and initial growth of diamond by biased hot filament chemical vapour deposition[J].Applied physics, A. Materials science & processing,1997(3):241-249. |
| [11] | WANG W L;Liao K J;Esteve J;Polo M C, Sanches G.Mechanism of Diamond Nucleation Enhancement by Electron Emission Via Hat Filament Chemical Vapor Deposition[J].Diamond and Related Materials,1999:23-126. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%