用对靶溅射技术在MgAl2O4 (100) (MAO) 和SrTiO3 (100) (STO)单晶基底上制备Pt薄膜.基底温度为700℃时,Pt薄膜外延生长为(200)取向,Pt/STO 薄膜的电阻率很低,而Pt/MAO 薄膜表现出高电阻特征.此外,Pt (50nm)/La0.67Ca0.33MnO3 (50nm)/STO的制备和研究表明,在包括庞磁电阻材料的器件设计中,Pt是一种较好的电极材料.
Thin platinum (Pt) films were prepared on single-crystal substrates MgAl2O4 (100) (MAO) and SrTiO3 (100) (STO) by a facing-target sputtering technique. The films prepared at higher substrate temperature (Ts= 700℃) were grown epitaxially with (200) orientation on SrTiO3 (100) and MgAl2O4 (100). Different from the lower resistivity of Pt/STO film, Pt/MAO film shows a very higher resistivity and the temperature dependence of the resistance exhibits insulator behavior because of the pinhole formation. We also grew epitaxial Pt (50 nm)/La0.67Ca0.33MnO3 (50nm)/STO structure, indicating that Pt is a good electrode for devices involving colossal magnetoresistance materials.
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