退火效应对MOCVD生长的ZnO薄膜的影响

1.山东大学晶体材料国家重点实验室,济南,250100

2.山东大学晶体材料国家重点实验室,济南,250100

3.山东大学晶体材料国家重点实验室,济南,250100

4.山东大学晶体材料国家重点实验室,济南,250100

5.山东大学晶体材料国家重点实验室,济南,250100

6.山东大学晶体材料国家重点实验室,济南,250100

7.山东大学晶体材料国家重点实验室,济南,250100

基金项目: 国家自然科学基金(11250005130390)

Influence of Annealing on the Properties of ZnO Thin Film

我们利用MOCVD设备在α-Al2O3衬底上生长了c轴取向的ZnO薄膜,通过X射线衍射(XRD)、光致发光谱(PL)对ZnO薄膜进行表征,研究了退火对ZnO薄膜光电特性影响.通过退火优化, ZnO薄膜的结晶性得到提高,晶粒尺寸变大,紫外光发射峰的强度相对变强.

[1]	Ya ma moto T;Shiosaki T;Kawabata A .Optical Properties of Single-crystalline ZnO Film Smoothly Chemical Vapor Deposited on Intermediately Sputtered Thin ZnO Film on Sapphire[J].Applied Physics Letters,1980,51:3113.
[2]	Minami T;Nanto H;Takata S .Electrical and Optical Properties of Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering for Transparent Electrode Applications[J].Applied Physics Letters,1984,23:280.
[3]	华素坤.热液条件下ZnO晶体的形成机理[J].人工晶体学报,1994(03):177.
[4]	Park W I;An S-J;Gyu-Chul Yi;Hyun , Jang M .Metal-organic Vapor Phase Epitaxial Growth and Photoluminescenct Properties of ZnO/ZnMgO Quantum Wells[J].Materials Research,2001,16:1358.
[5]	Gorla C R;Emanetoglu N W;Liang S et al.Structural,Optical and Surface Acoustic Wave Properties of Epitaxial ZnO Films Grown on(012) Sapphire by Metalorganic Chemical Vapor Deposition[J].Applied Physics Letters,1999,85:2595.
[6]	Egelhaaf H-J;Oelkrug D .Characterization of Zinc Oxide Crystal Whiskers Grown by Thermal Evaporation[J].Journal of Crystal Growth,1996,161:190.
[7]	Bethke S;Pan H;Wessels B W .Luminescence of Heteroepitaxial Zinc Oxide[J].Applied Physics Letters,1998,52:138.
[8]	Jin B J;Im S S;Lee Y .Ultraviolet Emission and Microstructural Evolution in Pulsed-laser-deposition ZnO Films[J].Thin Solid Films,2000,366:107.

上一张下一张

计量

作者相关

文章评分