SiCN薄膜在Si衬底上的沉积

人工晶体学报, 2004, 33(6): 913-917. doi: 10.3969/j.issn.1000-985X.2004.06.008

SiCN薄膜在Si衬底上的沉积

程文娟 ^1, , 张阳 ^2, , 江锦春 ^3, , 朱鹤孙 ^4,

1.清华大学化学系,功能晶体与薄膜研究所,北京,100084

2.清华大学化学系,功能晶体与薄膜研究所,北京,100084;清华大学光子与电子技术研究中心,北京,100084

3.清华大学化学系,功能晶体与薄膜研究所,北京,100084

4.清华大学化学系,功能晶体与薄膜研究所,北京,100084

关键词： SiCN薄膜 , 微波等离子体化学气相沉积 , 扫描电镜 , X射线光电子能谱 , X射线衍射

Deposition of Silicon Carbon Nitride Film on Si (100) Substrates

本文采用微波等离子体化学气相沉积(MPCVD)系统,在单晶Si衬底上制备出了SiCN薄膜.所采用的源气体为高纯CH4和N2,而Si源来自于Si衬底、SiH4和Si棒.用场发射扫描电镜(SEM)、X射线光电子能谱(XPS)和X射线衍射谱(XRD)对样品进行了表征与分析.结果表明,外加Si源、高的衬底温度、高流量N2有助于提高样品的成膜质量.所得到SiCN样品是新型的六方结构三元化合物.

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SiCN薄膜在Si衬底上的沉积

Deposition of Silicon Carbon Nitride Film on Si (100) Substrates

参考文献