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本文研究了采用VHF-PECVD技术制备的微晶硅薄膜的纵向均匀性.喇曼测试结果显示:微晶硅薄膜存在着生长方向的结构不均匀,随厚度的增加,材料的晶化率逐渐变大;不同衬底其非晶孵化点是不一样的,对于同一种衬底,绒度大相应的晶化率就大,对应着孵化层的厚度小;AFM测试结果明显的给出:材料的结构随厚度增加发生变化.

参考文献

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[6] 张晓丹,赵颖,朱锋,侯国付,魏长春,熊文娟,孙健,任慧志,耿新华,熊绍珍.VHF-PECVD低温高速生长的硅薄膜材料特性研究[J].光电子·激光,2004(05):507-511.
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