采用脉冲激光沉积技术在不同温度和氧分压下,在(100)Si片和抛光石英片上生长了一系列(200)面择优取向的Nd:LuVO4薄膜.利用X射线衍射分析了所制备薄膜的成膜情况,认为成膜较为适宜的温度为700℃,氧分压为10Pa.用棱镜耦合法测得了该薄膜的有效折射率为2.0452.利用扫描电镜(SEM)观察了Nd:LuVO4薄膜的表面形貌.
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