采用坩埚下降法以及坩埚密封技术,成功生长了直径50mm的新型压电晶体Sr3Ga2Ge4O14.测试了晶体的晶格常数、热膨胀系数、密度、硬度和透过光谱等基本物理性能.测试结果表明:晶体热膨胀系数明显小于石英晶体,而且α11和α33相对比较接近,有利于该晶体用作声表面波用基片材料.在250～2500nm波段范围内,其透过率均大于80%,优于相同结构的La3Ga5SiO14晶体,是一种潜在的激光基质晶体材料.
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