欢迎登录材料期刊网

材料期刊网

高级检索

本工作采用蒙特卡罗模拟,研究了以CH4/H2气体混合物作为源料气体的电子辅助热丝化学气相沉积中甲烷浓度对气相沉积过程的影响.计算了典型实验条件下电子能量分布,研究了电子平均能量、碎片H及CH3数目的空间分布、H与CH3的比值及CH3携带的能量随甲烷浓度的变化.结果表明:当电子能量为2-3eV时,电子的数密度达到一峰值;平均电子能量随着甲烷浓度的增加而增加;电子与气体分子碰撞产生的碎片H、CH3和CH2的数密度随距热丝的距离而变化;随着甲烷浓度的增加,原子氢H的数目缓慢下降,然而,官能团CH3和CH2的数目缓慢上升;H与CH3的数量比随甲烷浓度的增加而减少;碎片CH3携带的能量处于1~5eV范围之内,且当甲烷浓度为1.3%时,该能量达到一最值.

参考文献

[1] May PW. .Diamond thin films: a 21st-century material[J].Philosophical transactions of the Royal Society. Mathematical, physical, and engineering sciences,2000(1766):473-495.
[2] Wang W.L. .Mechanism of diamond nucleation enhancement by electron emission via hot filament chemical vapor deposition[J].Diamond and Related Materials,1999(2 Mar):123-126.
[3] Dong L F;Chen J Y et al.Dissociation Process of CH4/H2 Gas Mixture during EACVD[J].Thin Solid Films,2001,390:93.
[4] 董丽芳,陈俊英,董国义,尚勇.Monte Carlo simulation of the behaviour of electrons during electron-assisted chemical vapour deposition of diamond[J].中国物理(英文版),2002(05):419-424.
[5] Dong LF;Ma BQ;Wang ZJ .Electron behaviour in CH4/H-2 gas mixture in electron-assisted chemical vapour deposition[J].Chinese physics,2004(10):1597-1600.
[6] Yarbrough W A;Tankala K;Mccray M et al.Hydrogen Assisted Heat Transfer during Diamond Growth Using Carbon and Tantalum Filaments[J].Applied Physics Letters,1992,60(17):2068-2070.
[7] Saelec H T;Lucas J .Simulation of Electron Swarm Motion in Hydrogen and Carbon Monoxide for High E/N[J].Journal of Physics D:Applied Physics,1977,10:343.
[8] Connell LL.;Chu HN.;Vestyck DJ.;Jensen E.;Butler JE.;Fleming JW. .SPATIALLY RESOLVED ATOMIC HYDROGEN CONCENTRATIONS AND MOLECULAR HYDROGEN TEMPERATURE PROFILES IN THE CHEMICAL-VAPOR DEPOSITION OF DIAMOND[J].Journal of Applied Physics,1995(6):3622-3634.
[9] Schafer L;Klages C P;Meier U et al.Atomic Hydrogen Concentration Profiles at Filaments Used for Chemical Vapor Deposition of Diamond[J].Applied Physics Letters,1991,58(06):571-573.
[10] Zalicki P;Ma Y;Zare R N et al.Measurement of the Methyl Radical Concentration Profile in a Hot-filament Reactor[J].Applied Physics Letters,1995,67(01):144-146.
[11] KondohE;OhtaT;MitomoT;etal .SurfaceReactionKineticsofGas-phaseDiamondGrowth[J].Journal of Applied Physics,1993,73(06):3041-3046.
[12] 董丽芳,张玉红.Monte Carlo Simulation of Diamond Deposition at Low Temperature[J].中国物理快报(英文版),2001(08):1138-1140.
[13] Fu GS;Wang XH;Yu W;Han L;Dong LF;Li XW .Textured diamond films growth on (100) silicon via electron-assisted hot filament chemical vapor deposition[J].Applied physics letters,1997(15):1965-1967.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%