氢化非晶硅薄膜具有优异的光电特性,在制备薄膜太阳能电池中有重要的应用.本文采用热丝辅助MWECR CVD技术,通过调整各种工艺参数,制备了高沉积速率(DR＞2.5nm/s)及高光敏性(σph/σD＞105)的氢化非晶硅薄膜.实验表明,在衬底表面温度的分布中,热丝辐射和离子轰击引起的温度对薄膜的光敏性影响较大;在薄膜沉积的最后几分钟适当加大H2稀释率,有利于薄膜光电特性的改善.
The hydrogenated amorphous silicon (a-Si:H)manufactured by plasma deposition techniques has been extensively investigated as a low-cost material used for solar cells production, during which its photovoltaic properties are strongly dependent on the H content and various H-Si bonding configurations closely related to the experiment parameters. In this study, samples are deposited using microwave electron cyclotron resonance chemical vapor deposition ( MW ECR CVD ) system assisted by hot filament. The parameters are adjusted to improve the deposition rate (DR) and photosensitivity ( σph/σD ) of a-Si:H thin films and infrared spectroscopy is utilized to determine the H content and H-Si configuration. It is suggested that in this system, the higher temperature caused by the energetic bombardment of ions and radiation of hot filament is, the higher value of σph/σD is obtained, and meanwhile the photo-electric properties of a-Si: H films are improved by chemical etching of weak Si-Si bonds when the H2 dilution ratio is increased for the last few minutes during the film deposition.
参考文献
| [1] | NAKAYAMA Y;Kondoh M;Hitsuishi K;Zhang M, Kawamura T .Behavior of Charged Particles in an Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Reactor[J].Applied Physics Letters,1990,57:2297. |
| [2] | Dalal V L;Leonard M;Baldwin G .Fabrication of Amorphous Silicon Materials and Solar Cells at High Temperatures Using ECR Deposition Techniques[J].Journal of Non-Crystalline Solids,1993,164:71. |
| [3] | Hishikawa Y;Tsuda S;Wakisaka K;Kuwano Y .Principles for Controlling the Optical and Electrical Properties of Hydrogenated Amorphous Silicon Deposited from a Silane Plasma[J].Applied Physics Letters,1993,73:4227. |
| [4] | Mahan A H;Carapella J;Nelson B et al.Deposition of Device Quality,Low H Content Amorphous Silicon[J].Applied Physics Letters,1991,69:6729. |
| [5] | Ueda Y;Inoue Y;Shinohara S;Kawai Y .Deposition of Large Area Amorphous Silicon Films by ECR Plasma CVD[J].Vacuum,1997,48:119. |
| [6] | Collins R W et al.Effect of Deposition Conditions on the Nucleation and Growth of Glow-discharge a-Si:H[J].Applied Physics Letters,1987,61:1869. |
| [7] | Seitz H;Bauer S;Dusane R O;Schroder B .Influence of Atomic Hydrogen on the Growth Kinetics of a-Si:H Films and on the Properties of Silicon.Substrates[J].Thin Solid Films,2001,395:116. |
| [8] | Matsuda A .Formation Kinetics and Control of Microcrystallite in μc-Si:H from Glow Discharge Plasma[J].Journal of NON-CRYSTALLINE SOLIDS,1983,59-60:767. |
| [9] | Parsons GN. .Surface reactions in very low temperature (< 150 degrees C) hydrogenated amorphous silicon deposition, and applications to thin film transistors[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2000(Pt.A):23-30. |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%