利用808nm激光二极管泵浦的Nd:YAG晶体发出的1064nm皮秒激光器实现了InGaAlP多量子阱材料的红外1064nm向可见光波长660nm、625nm、580nm的上转换,并且通过条纹相机收集的时间分辨表征了此材料的上转换激发态的寿命.波长1064nm向625nm的上转换激发态寿命约为5ns,而1064nm向660nm的上转换激发态寿命约为7ns.通过双光子原理解释了此现象.
参考文献
| [1] | Chen X.B.;Li K.;Feng Y.;Bi S.Z.;Zhang G.Y.;Sun Y.G.;Li M.X. .Nonresonant up-conversion energy transfer directly achieved through a kind of coupling state quasi-clusters of rare-earth ions[J].Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter,1999(4/6):364-375. |
| [2] | Cingolani R;Ploog K .Frequency and Density Dependent Radiative Recombination Processes in III-V Quantum Wells and Superlattices[J].Advances in Physics,1991,40:535. |
| [3] | Hellmann R;Euteneuer A et al.Low Temperature Anti-stokes Luminescence Meditated by Disorder in Semiconductor Quantum-well Structures[J].Physical Review B,1995,51(24):18053-18056. |
| [4] | CHO Yong-hoon;Kim D S;Choe Byung-Doo .Dynamics of Anti-stokes Photoluminescence in Type II AlGaAs-GaInP2 Heterostructures:The Important Role of Long-lived Carriers near the Interface[J].Physical Review B,56:4375-4378. |
| [5] | Driessen F A J M .High Efficency Energy Up-conversion at GaAs-GaInP Interfaces[J].Applied Physics Letters,67(19):2813-2815. |
| [6] | Driessen F A J M;Cheong H M;Mascarenhas A et al.Interface-induced Conversion of Infared to Visible Light at Semiconductor Interface[J].Physical Review B,1996,54(08):5263-5266. |
| [7] | Schrottke L;Grahn H T et al.Enhanced Anti-stokes Photoluminescence in a GaAs/AlGaAs Single Quantum Well with Growth Islands[J].PHYSICAL REVIEW LETTERS,56(24):15553-15556. |
| [8] | Sverre Froyen;Alex Zunger et al.Polarization Fields and Band Offsets in GaInP/GaAs and Ordered/disordered GaInP Superlattices[J].Applied Physics Letters,1996,68(20):2852-2854. |
| [9] | Zeman J;Martinez G;Yu P Y et al.Band Alignment and Photoluminescence Up-conversion at the GaAs/(ordered)GaInP Heterojunction[J].PHYSICAL REVIEW B,55(20):13428-13431. |
| [10] | Borri P.;Gurioli M.;Bogani F.;Ceccherini S. .AUGER HEATING OF CARRIERS IN GAAS/ALAS HETEROSTRUCTURES[J].Solid State Communications,1997(2):77-81. |
| [11] | Kamata N;Hoshino K;Uchida T;Yamada K Nishioka M Arakawa Y .Up-conversion Luminescence via a Below-gap State in GaAs/AlGaAs Quantum Wells[J].Superlattices and Microstructures,1997,22(04):521-527. |
| [12] | Hyeonsik Cheong M;Brian Fluegel;Mark Hanna C .Photoluminescence Up-conversion in GaAs/AlGaAs Heterostructures[J].Physical Review B,1998,58(08):4254-4257. |
| [13] | J. S. Sandhu;A. P. Heberle;B. W. Alphenaar .Near-infrared to visible up-conversion in a forward-biased Schottky diode with a p-doped channel[J].Applied physics letters,2000(12):1507-1509. |
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