本文详细介绍了电沉积制备Cu(In,Ga)Se2(CIGS)薄膜的原理.电解液由CuCl2,InCl3,GaCl3和柠檬酸钠溶液组成.溶流组成通过改变柠檬酸钠的浓度,铟和镓的沉积电位接近或等于铜和硒的沉积电位.Cu(In,Ga)Se2薄膜的性能研究分别采用扫描电镜自带能谱仪(EDS)、X射线衍射(XRD)和扫描电镜分析Cu(In,Ga)Se2薄膜的化学组成、晶体结构和表面形貌.结果表明当柠檬酸钠浓度为1.0M时,所制备的Cu(In,Ga)Se2薄膜为单一的黄铜矿结构,晶粒大小均匀.
The principle of electrodeposition of Cu(In,Ga)Se2 thin films was discussed in detail. The solution for depositing Cu(In,Ga)Se2 thin films is composed of CuCl2, InCl3, GaCl3, H2SeO3 and Na-citrate dissolved in the deionized water. The electrode potential of indium and gallium became close or equal to that of copper and selenium by adjusting the concentration of Na-citrate. Cu(In,Ga)Se2 thin films were characterized by energy dispersive spectroscopy (EDS),scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results indicate that Cu(In,Ga)Se2 thin films have a single chalcopyrite structure and a better homogeneous grain size when Na-citrate's concentration is 1.0M.
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