不同能量He离子注入单晶Si引起的损伤研究

人工晶体学报, 2005, 34(4): 714-719. doi: 10.3969/j.issn.1000-985X.2005.04.031

不同能量He离子注入单晶Si引起的损伤研究

刘昌龙 ^1, , 尹立军 ^2, , 吕依颖 ^3, , 阮永丰 ^4, , ^5, , ^6,

1.天津大学理学院物理系,天津,300072;天津市低维功能材料物理与制备技术重点实验室,天津,300072

2.天津大学理学院物理系,天津,300072

3.天津大学理学院物理系,天津,300072

4.天津大学理学院物理系,天津,300072

5.CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France

6.LMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155 ,F37071 Tours Cedex,France

基金项目: 教育部留学回国人员科研启动基金(413147) 天津大学校科研和教改项目(W50301)

关键词：单晶Si , He离子注入 , 高温退火 , He空腔 , 透射电子显微镜

Damage Creation in Single Crystal Silicon Induced by He Ion Implantation at Different Energies

40、160和1550 keV能量的He离子在室温下注入单晶Si样品到相同的剂量5×1016 ions/cm2,采用透射电子显微镜(TEM)研究了800℃退火1h在Si中引起的损伤形貌.结果表明,三种能量的He离子注入Si并经高温退火均能产生空腔,但空腔的形貌、尺寸以及分布深度都依赖于离子的能量.结合TRIM程序计算结果对空腔和其它缺陷产生对He离子能量的依赖性进行了讨论.

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