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采用不同浓度的Br2-MeOH作为抛光液对CdZnTe进行化学抛光,发现用2%Br2-MeOH腐蚀时速率平稳且易于控制,能有效去除表面划痕,获得光亮表面.AFM分析发现,抛光后表面粗糙度降低30%,平整度增加.XPS分析发现CdZnTe的(111)Cd极性面变成了富Te非极性表面.PL分析发现表面陷阱态密度降低,表面晶格的完整性增强.

参考文献

[1] James;Ralph;Burger et al.Method for Surface Treatment of a Cadmium Zinc Telluride Crystal[P].United States Patent:5933706
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[3] Kim YongHun;An SeYoung;Lee Juyoung et al.Photoluminescence Study on the Effects of the Surface of CdTe by Surface Passivation[J].Journal of Applied Physics,1999,85:7370-7373.
[4] Wright G.;Cui Y.;Roy U.N.;Barnett C.;Reed K.;Burger A.;Lu F.;Li L.;James R.B. .The effects of chemical etching on the charge collection efficiency of {111} oriented Cd/sub 0.9/Zn/sub 0.1/Te nuclear radiation detectors[J].IEEE Transactions on Nuclear Science,2002(5):2521-2525.
[5] Rouse A.A.;Szeles C.;Ndap J.-O.;Soldner S.A.;Parnham K.B.;Gaspar D.J.;Engelhard M.H.;Lea A.S.;Shutthanandan S.V.;Thevuthasan T.S.;Baer D.R. .Interfacial chemistry and the performance of bromine-etched CdZnTe radiation detector devices[J].IEEE Transactions on Nuclear Science,2002(4):5-9.
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