采用气相传输平衡(VTE)技术,在(0001)面白宝石衬底表面上成功地制备出单相γ-LiAlO2层.研究了白宝石衬底表面形貌对γ-LiAlO2层质量的影响,发现白宝石衬底的表面粗糙度和退火处理是两个影响γ-LiAlO2层质量的重要因素.要制备高质量的γ-LiAlO2层,适度的表面粗糙度是恰当的.对白宝石衬底进行退火处理,γ-LiAlO2层的择优取向变差.并对其中可能的机理进行了探讨.
A single-phase γ-LiAlO2 layer was successfully fabricated on (0001) sapphire by vapor transport equilibration (VTE) technique. The effects of surface morphology of c-plane sapphire substrate on the quality of γ-LiAlO2 layer were investigated. We have found and verified that the surface roughness and annealing treatment of sapphire are two essential factors to affect γ-LiAlO2 layer quality on the sapphire substrate. To grow high-quality γ-LiAlO2 layer,a moderate surface roughness of sapphire substrate is suitable. The annealing treatment of sapphire substrate deteriorates the oriented growth of the γ-LiAlO2 layer on the sapphire. And the possible mechanism involved was discussed.
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