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  4. AlN薄膜择优取向生长机理及制备工艺

人工晶体学报, 2005, 34(6): 1146-1153. doi: 10.3969/j.issn.1000-985X.2005.06.034

AlN薄膜择优取向生长机理及制备工艺

门海泉 1, , 周灵平 2, , 肖汉宁 3,

1.湖南大学材料科学与工程学院,长沙,410082

2.湖南大学材料科学与工程学院,长沙,410082

3.湖南大学材料科学与工程学院,长沙,410082

关键词： AlN薄膜 , 择优取向 , 反应溅射

Growth Mechanism and Synthesizing Methods of Preferential Orientation of AlN Thin Films

不同择优取向的AlN薄膜具有不同的物理化学性质和应用,其择优取向生长机理主要包括热力学的"能量最小化"理论和动力学的"选择进化"理论.在众多的制备方法中,通过控制工艺参数可以沉积出不同择优取向的A1N薄膜,各工艺参数对其择优取向的影响取决于沉积粒子到达衬底前携带能量的大小,它们引起的各晶面生长速率的竞争,其结果表明,择优取向晶面是该沉积条件下生长速率最快的晶面.在诸多工艺参数中,靶基距、离子束轰击是控制AlN薄膜择优取向的最重要工艺参数,靶基距增大容易得到(100)晶面择优取向的AlN薄膜,而一定范围内离子束轰击能量和轰击角度的增大会促进(002)晶面择优取向生长.

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