欢迎登录材料期刊网

材料期刊网

高级检索

在高分辨X射线衍射仪上,利用不对称布拉格衍射STD技术与单晶摇摆曲线技术相结合的方法,对碲锌镉单晶材料的晶格畸变进行了分析测定.此方法实现了一次装样,多角度、多次测定晶体的摇摆曲线,从而利用多组实验数据完成多元线性回归方程组的求解,避开了一般应变测定方法中难以确定无应力状态下衍射角的问题.所测定的生长态碲锌镉晶片晶格畸变量为10-3~10-2数量级,该畸变量是碲锌镉晶片存在成份偏析、位错和空位等缺陷以及晶片受到的应力综合作用的结果.

参考文献

[1] Fewster P F .X-ray Diffraction from Low Dimensional Structures[J].Semiconductor Science and Technology,1993,8(10):1915-1916.
[2] 丛秋滋.多晶二维射线衍射[M].北京:科学出版社,1997:39-43.
[3] Dickey E C;Dravid V P;Hubbard C R .[J].Journal of the American Ceramic Society,1997,80:2773.
[4] YoshiikeT;FujjiN;KozakiS .[J].Journal of Applied Physics,1997,36:5764.
[5] Ward Ⅲ A;Hendricks R W.Proc.5th Int.Conf.Residual Stresses[C].Sweden,1997:1054.
[6] Hiroshi Suzuki;Koichi Akita;Hiroshi Misawa.X-Ray Stress Measurement Method for Single Crystal with Unknown Stress-free Lattice Parameter[J].The Japan Society of Applied Physics,2003(05):2876.
[7] Simmons G;Wang H.Single Crystal Elastic Constants and Calculated Aggregate Properties[M].Cambridge,Massachusetts and London,England,1971:13.
[8] Guergouri K;Triboulet R;Tromson-Carli A;Marfaing Y .[J].Journal of Crystal Growth,1988,86:61.
[9] Moller M O;Bicknell-Tassius R N;Landwehr G .Theoretical X-ray Bragg Reflection Widths and Reflectivities of Ⅱ -Ⅵ Semiconductors[J].Journal of Applied Physics,1992,72(11):5108.
[10] Bevan M J;Doyle N J;Snyder D A .Comparison of HgCdTe MOCVD Films on Lattice-matched (Cd,Zn)Te and Cd(TeSe) Substrates[J].Journal of Crystal Growth,1990,102:785.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%