玻璃衬底上中温制备多晶硅薄膜的量子态现象

人工晶体学报, 2006, 35(1): 104-106. doi: 10.3969/j.issn.1000-985X.2006.01.023

玻璃衬底上中温制备多晶硅薄膜的量子态现象

靳瑞敏 ^1, , 卢景霄 ^2, , 冯团辉 ^3, , 王海燕 ^4, , 张丽伟 ^5,

1.郑州大学材料物理教育部重点实验室,郑州,450052

2.郑州大学材料物理教育部重点实验室,郑州,450052

3.郑州大学材料物理教育部重点实验室,郑州,450052

4.郑州大学材料物理教育部重点实验室,郑州,450052

5.郑州大学材料物理教育部重点实验室,郑州,450052

关键词： PECVD法 , 非晶硅薄膜 , 传统炉退火 , 量子态 , 晶粒大小

Quantum State of Poly-Si Films at Middle Temperature on Glass Substrate

Keywords： PECVD , a-Si: H film , conventional furnace annealing , quantum state , grain size

用PECVD法直接沉积的非晶硅(a-Si:H)薄膜用传统炉在中温退火,然后用拉曼光谱、XRD和SEM分析,发现晶粒大小随退火温度和退火时间呈现量子态现象.分析发现在传统炉中850℃下退火三个小时晶粒大小出现极大值,平均晶粒尺寸为30nm左右.

Amorphous silicon films prepared by PECVD on the glass substrate have been crystallized by conventional furnace annealing (FA) at middle temperature. From the Raman spectra, X-ray diffraction(XRD) and scanning electronic microscope (SEM), the quantum state in these processions was found and discussed. The crystallized grain size is biggest at 850℃ for 3h by FA.

参考文献

[1]	Dimova Malinovska D;Angelov O;Sendova Vassileva M et al.Poly-Si Thin Films on Glass Subs[J].Thin Solid Films,2004,451-452:303-307.
[2]	Rath JK;Franken RHJ;Gordijn A;Schropp REI;Goedheer WJ .Growth mechanism of microcrystalline silicon at high pressure conditions[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2004(0):56-60.
[3]	Jia Song;Ge Huichun;Geng Xinhua et al.Preparation of Thin Film Poly-stalline Silicon on Glass by Photo Thermal Annealing[J].Solar Energy Materials and Solar Cells,2000,62:201-205.
[4]	Park JH.;Kim DY.;Ko JK.;Chakrabarty K.;Yi J. .High temperature crystallized poly-Si on Mo substrates for TFT application[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2003(1/2):303-308.

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