水热法合成Zn1-xNixO稀磁半导体

人工晶体学报, 2006, 35(2): 244-223. doi: 10.3969/j.issn.1000-985X.2006.02.009

水热法合成Zn1-xNixO稀磁半导体

韦志仁 ^1, , 李军 ^2, , 刘超 ^3, , 林琳 ^4, , 郑一博 ^5, , 葛世艳 ^6, , 张华伟 ^7, , 窦军红 ^8,

1.河北大学物理科学与技术学院,保定,071002

2.河北大学物理科学与技术学院,保定,071002

3.河北大学物理科学与技术学院,保定,071002

4.河北大学物理科学与技术学院,保定,071002

5.河北大学物理科学与技术学院,保定,071002

6.河北大学物理科学与技术学院,保定,071002

7.河北大学物理科学与技术学院,保定,071002

8.河北大学物理科学与技术学院,保定,071002

基金项目: 河北省自然科学基金(E 2004000117;H 2004000130) 中国科学院资助项目(50471937)

关键词：氧化锌 , 水热合成 , 稀磁半导体

Hydrothermal Synthesis of Zn1-xNixO Room Temperature DMS

本文采用水热法,在温度430℃,填充度35%,矿化剂为3mol/L KOH,前驱物为添加适量NiCl2*6H2O的Zn(OH)2,反应时间24h,合成了Zn1-xNixO稀磁半导体晶体.当在Zn(OH)2中添加一定量的NiCl2*6H2O为前驱物,水热反应产物为掺杂Ni的多种形态ZnO混合晶体,对其个体较大的晶体中进行电子探针测量表明,前驱物中的添加量和晶体中实际掺入量有很大的差异,只有少量的Ni离子掺入ZnO,最大Ni原子分数含量为0.62%.采用超导量子干涉磁强计测量材料的磁性,发现在室温以下,晶体的磁化强度不随温度升高而下降.在室温下,存在明显的磁饱和现象和磁滞回线,说明具有室温下的铁磁性.

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